Thin-film solar array system and method for producing the same

ABSTRACT

Disclosed is a thin-layer solar cell array system and a method for producing the same, having placed over a carrier substrate of plane design, a solar cell layer which is provided with at least one n-type conducting semiconductor zone (emitter) and at least one p-type conducting semiconductor zone (base) as well as a first and a second contact electrode, each of different electric polarity, which are each electrically connected to the emitter respectively to the base. 
     The invention is distinguished by at least the first contact electrode being applied directly on the carrier substrate or separated by an electrically insulating layer, an electrically insulating layer being provided thereupon, and the solar cell layer being placed over the insulating layer, by at least one contact channel extending through the insulating layer and/or the solar cell layer in such a manner that the first contact electrode and the semiconductor layer zone of respective polarity inside the solar cell layer being electrically connectable by means of an electrically conducting material provided inside the contact channel, and by the second contact electrode like the first contact electrode being placed above or in the case of a conductive carrier layer also under the carrier layer and under the electrically insulating layer and the solar cell layer, and by at least one contact channel extending through the insulating layer and/or the solar cell layer in such a manner that the second contact electrode and the semiconductor layer zone of respective polarity inside the solar cell layer being electrically connected by means of an electrically conducting material provided inside the contact channel.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin-film solar cell array system anda method for producing the same.

2. Description of the Prior Art

Solar cells are components which convert light into electric energy.Usually they comprise a semiconductor material containing n-type andp-type zones, i.e. zones in which current is transported by means ofrespectively negative and positive charge carriers. These zones arereferred to respectively as the emitter and the base. The positive andnegative charge carriers generated by incident light are separated andcan be conveyed by means of metallic contacts on the respective zones.Only those charge carriers contribute to useable electric power thatreach the contacts and do not recombine with a charge carrier of reversepolarity. A further loss mechanism is the reflection of light at themetal contacts, referred to as contact shading the solar cell. Thesmaller the shading, i.e. the more light which is able to reach thesolar cell, the greater the current exploitation by the cell per areaand therefore the greater the efficiency. The contacts on thelight-facing side, usually the front surface of the cells, are usuallydesigned as comb-shaped structures, so-called grids. However, in orderto ensure current conveyance with little resistance, the spacing of thegrid fingers must not be selected too large and the number and crosssection must not be selected to be too small. A certain amount ofshading must be taken into account in conventional solar cells.

With the development of cheaper starting materials, the concept ofthin-film solar cells on cost-favorable substrates is gaining moresignificance. One such known solar cell (see FIG. 1a) comprises only oneactive solar cell layer 1 comprising a p-type doped base zone 1 b and,in the depicted instance of FIG. 1a, n-typed doped selective emitterzones 1 a. The active solar cell layer 1 applied to a carrier substrate2 usually possesses a thickness of approximately 3-50 mm. However, manysuch substrates 2 are not conductive. Therefore, the electrical contactto base 1 b cannot occur from the back surface via the carrier substrate2. Instead a so-called single-side grid comprising two intermeshinggrids, an emitter grid 3 a and a base grid 3 b, for contacting theemitter 1 a and the base 1 b respectively must be employed.

Such a solar cell array system can be simultaneously used for connectingmultiple solar cells on a carrier substrate as described in DE 197 15138.

U.S. Pat. No. 4,490,573 describes a solar cell. See in particular theembodiment of FIG. 8, which is provided with a contact layer 51 appliedonto a glass substrate 52 and is electrically connected via contactingzones with, for example the n-type doped zone of a solar cell layer 54.Solar-cell layer 54 is produced by means of gradual doping using thedoping atoms arsenic and bromide. This is essentially illustrated inFIG. 9 and the respective description. Contact electrodes 16 are placeddirectly on the p-typed doped layer of the solar cell layer. Therefore,the electrode structures are provided on both sides of the solar celllayer and shade the solar cell layer at least partially from unimpededirradiation.

The solar cell described in WO89/04062, providing a multilayered solarcell array system, has the same drawback. See in particular theembodiments of FIGS. 1a and b. FIG. 1b essentially shows a firstelectrode 14 placed directly on a glass substrate on which thesilicon-based solar cell layer is applied. A second electrode layer,which is interrupted by dielectric zones 20, is in direct contact withsolar cell layer 16. A gridlike electrode structure 32, which isconnected to the solar cell layer 16 and to the first electrode layer 14via the electrically conducting connecting channels 22, is placed on thedielectric layer 20.

FIG. 1b shows a similar known arrangement for a back-contact cell, aconcept for highly efficient solar cells. In this case, both contacts 3a and 3 b are placed on the back surface of the solar cells tocompletely eliminate shading on the front surface. If the contacts arerealized as narrow grids, light that reaches from the back surfacethrough to the front surface can also contribute to generatingelectricity (so-called bifacial cell).

Hitherto realization of this single-side grid has only been possible bymeans of very complicated processes. The selective emitter is created bymultiple masking steps: the emitter does not comprise a homogeneouslateral layer but rather comprises a subzone corresponding to the shapeof the emitter grid. In this manner, base zones are retained on thesurface and can be directly contacted. Placing the respective metalcontacts precisely on the corresponding zones poses a critical alignmentproblem and also requires masks, which must be accurately aligned.

Such a type back-contact cell is described in JP 2-51282 and is known asemitter wrap through (EWT). However, an EWT cell is limited to solarcells made of silicon disks respectively wafers. But the essentialcost-saving potential in photo-voltaic cells lies in reducing the use ofthe expensive silicon to only a few- micrometer-thick layer, so-calledthin-layer solar cells. As a carrier substrate is a prerequisite forthese thin-layer solar cells, their back surface is not accessible andthe known EWT process cannot be applied. At the same time, due to thisminimal thickness, thin-layer cells permit using silicon of poorerquality than for conventional or EWT solar cells.

SUMMARY OF THE INVENTION

The present invention provides a thin-layer solar cell array systemhaving, placed over a carrier substrate of plane design, a solar celllayer having at least one n-type conducting semiconductor layer zone(emitter) and at least one p-type conducting (base) semiconductor layerzone as well as a first and a second contact electrodes each ofdifferent electrical polarity, which are each electrically connectedrespectively to the emitter and the base in such a way that a solar cellcan be produced in a simpler and less expensive manner without impairingthe efficiency of the solar cell. Contrary to the state of the art, theelectrical contact of the individual semiconductor zones occurs withoutusing masks which require highly accurate alignment and is realizableusing simpler methods. Furthermore, the thin-layer solar cell array ofthe invention permits simple interconnection of multiple solarstructures on a carrier substrate as well as allowing provision of aprotective diode. In particular, the thin-layer solar cell array systemprovides the connecting electrodes only on one side of the solar celllayer to, in this manner, have as few as possible shading losses due tothe electrode structures. Finally, the invention is a method forproducing the novel thin-layer solar cell array system.

The thin-layer solar cell array system of the invention places over acarrier substrate of plane design, a solar cell layer with at least onen-type conducting semiconductor zone, the emitter zone, and at least onep-type conducting semiconductor zone, the base zone, as well as a firstand a second contact electrode each of different electrical polarity,which are each respectively electrically connected to the emitter and tothe base. The thin layer solar cell is designed in such a manner thatthe first and the second contact electrodes are applied directly orseparated by an electrically insulating layer on the carrier substrateover which an electrically insulating layer is provided with the solarcell layer placed over this insulating layer. The contact electrodes arepreferably designed as grid-shaped strip conductors and are made ofmetal or other highly conductive materials. The two contact electrodes,which are electrically connectable to different polarities, are placedspaced apart on the carrier substrate.

For electrical contacting of the respective semiconductor layer zones(emitter zone, base zone) produced on top of each other with thecorresponding contact electrodes, first contact channels and secondcontact channels are provided which extend through the insulting layerand/or through the active solar cell layer down to the contactelectrodes.

Production can occur during deposition of the silicon layer but also bymeans of transformation respectively by means of diffusion. Preferablymultiple first and second contact channels are provided into whichelectrically conductive material is introduced by means of which thefirst contact electrodes are electrically connected with thesemiconductor zone corresponding to its polarity. Furthermore, thesecond contact electrode is electrically connected with thesemiconductor zone corresponding to the polarity thereof via secondcontact channels.

The contact channels are designed as one-sided blind holes bordered bythe respective contact electrodes and serve to electrically contact theindividual semiconductor layer zones without the contacting measuressubstantially influencing the active solar cell surface. Of the solarcell layer, only the cross sections of the individual contact channelsare lost, which however is a relatively small part of the surface.

With the contacting and the layered arrangement of the thin-layer solarcell of the invention, the solar cell can be divided into lateralsections as desired in that the layers can be separated down to theinsulating layer covering the contact electrodes. Such subdivisionpermits combining several solar cells applied to a single carriersubstrate. This is not possible, for example, with the previouslymentioned EWT solar cells. Furthermore, protective diodes, which areplaced on the same carrier substrate as the solar cells, are provided tobridge the solar cells in the event of malfunction and in this wayincrease secure operation and the lifetime of the solar cells.

Further embodiments of arranging the thin-layer solar cell array systemand the method for producing the same are explained in more detail withreference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is made more apparent in the following usingpreferred embodiments with reference to the accompanying drawingswithout the intention of limiting the scope or spirit of the invention.

FIGS. 1a and b illustrate a state-of-the-art single-side contacted solarcell array system,

FIG. 2 illustrates the principle setup of a back-contacted thin-layersolar cell designed according to the present invention,

FIGS. 3a-d illustrate steps for producing emitter-base contacting of theback surface thin-layer solar cell,

FIGS. 4a, b and c illustrate cross sections of various thin-layer solarcells,

FIG. 5 illustrates a thin-layer solar cell array system having aprotective diode,

FIG. 6 illustrates modular interconnection of multiple thin-layer solarcell array systems, and

FIG. 7 illustrates a cross section of an array system according to FIG.6.

DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 2 shows the principle setup of the invented back-contact thin-layersolar cell (BC-TFC, Engl. Back-contact thin-layer) of the presentinvention.

Before deposition of the active solar cell layer 1, strip conductors 3 aand 3 b made of metal or other conductive materials, such as e.g.silicides (e.g. TiSi₂) are directly applied to a carrier substrate 2 orto lower insulation layer 4. These strip conductors are covered with anupper electrical insulation layer 5 (for example, made of nitridesand/or oxides and/or carbides). In addition to electric insulation, thepurpose of this layer 5 is to encapsulate the metal of the contactelectrodes 3 a and 3 b, because it can melt in the subsequenttemperature steps (e.g. during deposition of the active semiconductorlayer or during formation of an emitter). Encapsulation ensures that themetal neither runs nor that large amounts of the metal diffuse throughthe insulation layer and adversely effect the quality of the activelayer in this manner.

If connection to a protective diode or multiple cells is to be possible,in this event the contact electrode 3 b must also be placed insulated onthe substrate. For this purpose, the carrier substrate 2 is designed asbeing conductive or porous. In the case of such a type of conductivesubstrate, the contact electrode 3 b is also placed on the back surfaceof the carrier substrate in such a manner that the contact can occur viathe substrate, which still corresponds to contacting with two contactson the side of the solar cell facing away from light; so to say aspecial case.

In the following, the contact electrodes 3 a and 3 b represent theelectrical contacting of the solar cell. Corresponding to the electricpolarity in the external circuit, they can be divided into positive(plus-) 3 b contact electrodes and negative (minus-) 3 a contactelectrodes. In general, the positive contact electrodes and the negativecontact electrodes alternate. However, other arrangements are possible(e.g. a positive contact strip conductor followed by twonegative-contact strip conductors and then again by a positive-contactstrip conductor).

The active semi-conductor layer 1 is deposited on the encapsulatedcontact electrodes 3 a and 3 b. Various semiconductor technologyprocesses are available for this purpose, e.g. deposition from theliquid phase (LPE) or from the gas phase (CVD) or plasma-supporteddeposition (PECVD), etc. It can be useful to first deposit a thin seedlayer whose quality is improved by means of a recrystallization processbefore the actual solar cell layer is epitaxially deposited on it.Expediently, this layer is already p-type conducting and represents thebase 1 b in the solar cell. Subsequently, the emitter 1 a is eitherformed by means of depositing the n-type conducting material or by meansof diffusing doping materials into the surface of the semiconductorlayer to a typical depth of 0.31-1 mm.

Contacting the solar cell, i.e. the electrical connection of emitter 1 aand base 1 b with the corresponding contact electrodes, i.e.negative-contact strip conductors 3 a for contacting the emitter,positive-contact strip conductors 3 b for contacting the base occurs bymeans of the contact holes 6 a and 6 b designed as blind holes,preferably produced perpendicular above the respective contactelectrodes through the active semiconductor layer 1. The distance andthe size of the contact channels 6 a and 6 b have to be optimized insuch a manner ensuring, on the one hand, good conductance of the chargecarrier from the solar cell into the strip conductor and, on the otherhand, least possible loss of the solar cell material.

Realization of electric contacting occurs by means of the followingsteps:

Prior to formation of the emitter, i.e. producing the top semiconductorlayer zone 1 a, the blind holes 6 a to be used for contacting theemitter are created through the active layer 1 to the insulation layer5. (See FIG. 3a.) The location of the blind holes 6 a is selected insuch a manner that they are situated above the negative-contactelectrodes 3 a. The blind holes 6 a may be etched, produced by laser orproduced by means of high-pressure particle radiation. Sawing smallslits or crosses is also possible.

Subsequently formation of the emitter, in which the entire free surfaceof the semiconductor layer 1 a, thus also the flanks of the blind holes6 a, are fully coated with a fully coated emitter layer 1 a (FIG. 3b)formed by means of diffusion.

Following formation of the emitter, the bottom of the emitter contactchannels 6 a is driven through the insulation layer 5 until the blindholes 6 a meet the metallic negative-contact electrodes 3 a (FIG. 3c).

Also following formation of the emitter, above the positive-contactelectrodes 3 b, the blind holes 6 b are produced through the layersequence la and 1 a to the positive-contact electrodes. The electricalcontact to the base layer 1 b is to be produced through these blindholes 6 b (FIG. 3c).

Electrical contacting, i.e. connecting the emitter 1 a and base 1 b andthe corresponding contact electrodes 3 a and 3 b (FIG. 3d) occurs bymeans of introducing an electrically conducting material 7, preferablymetal, in the blind holes 6 a, 6 b.

Usually, metal 7 is applied by means of vapor deposition and, ifnecessary, subsequently reinforced by means of electroplating. Metalpastes can also be squeegueed in. Therefore, it is advantageous that thevapor deposited metal 7 not only covers the bottoms but also the flanksin the lower zone of the holes 6 a and 6 b and in this way establishescontact between the respective semiconductor layer zones 1 a and 1 b andthe contact electrodes 3 a and 3 b via the insulation layer 5. To ensurethis, it has proved to be advantageous to taper the blind holes downwardas is explained herein with reference to FIG. 4.

However, suitable selection of contact electrode materials (e.g. silveror a mixture of aluminum and silver) can obviate vapor deposition. In anelectroplating process, metal (e.g. silver) can be directly grown on thebared contact electrode sites in the blind holes 6 a and 6 b.

The bared metals of the contact electrodes on the bottom of the blindholes can also be utilized as the vapor deposition source. Strongheating above the melting point partially evaporates or spatters themetal of the contact electrodes and precipitates on the flanks of theblind holes.

FIGS. 4a, b and c show in detail a diagrammatic view of the contactscheme, the cross sections depict a finished contacted thin-layer solarcell. Alternating contact electrodes 3 a and 3 b for negative andpositive contacts are located on the carrier substrate 2 with theoptional insulation layer 4. Contact electrodes 3 a and 3 b areinsulated from the active solar cell layer 1 by insulation layer 5.Located in the solar cell layer 1 above the contact electrodes 3 a and 3b are blind holes 6 a and 6 b. As the blind holes 6 a over thenegative-contact electrode 3 a were produced before forming the emitter,their flanks are coated with a fully coated emitter layer 1 a.Consequently, the metal 7 applied into the blind holes leads toelectrically connecting the emitter layer 1 a with the negative-contactelectrode 3 a. On the other hand, the blind holes 6 b above thepositive-contact electrode 3 b are not produced until after formation ofthe emitter (through the emitter layer at the surface). Metal 7 connectsthe base 1 b with the positive-contact electrode 3 b.

However, the emitter contact channels 6 a can also be produced duringproduction of the active solar cell layer 1. First, a thin layer 1 b isdeposited, and the holes provided for contacting the emitter areproduced in this layer in the aforedescribed manner. Prior thereto, thelayer 1 b can also be remelted or recrystallized in another manner toimprove their crystallographic quality. Subsequently, preferablyepitaxial deposition of the remaining solar cell layers 1 b and 1 aoccurs. There is no growth in the blind holes. However, the holes andthe deposition process must be selected in such a manner that the holesare not clogged by growth or grown over from the edge. Holes thatstrongly taper upward must be avoided, because this would preventmetallization by vapor deposition. However, as described over, the metalof the contact electrodes can be utilized as a source of vapordeposition in such a manner that upward tapering contact holes can evenbe very advantageous as shown in FIG. 4b.

The advantages of the formation of the emitter contact holes after afirst deposition as previously described are the small to-be-produceddepth of the blind holes, the large diameter of the to-be-producedholes—as the holes will become narrower again in the subsequentdeposition due to growth at the flanks of the holes—and the preventionof damage to the material at the flanks of the holes, as can alwaysoccur in producing blind holes. The two first factors reduce productioncosts enormously due to shorter process times and coarser masking.

Principally, base 1 b of the solar cell can also be contacted in anothermanner. The precondition is that deposition of at least the first layersof the active layer 1 b (approximately a few nanometers) is attemperatures below the melting temperature of the employed contact stripmaterial. For this purpose, before deposition, the isolation layer 5 isremoved or not even applied in the first place at the locations on thecorresponding contact electrodes 3 b, that should have contact to base 1b. (See FIG. 4.) This process even yields by means of the followinghigh-temperature steps a highly doped zone, a so-called back surfacefield, above the contact, which effects the solar cell positively.

The thin-layer solar cell array system of the invention possesses theintrinsic capability of producing a protective diode 9 simultaneouslywith the solar cell 8 on the same carrier substrate. (See FIG. 5.)Protective diodes have the principle purpose of bridging possiblemalfunctions or protecting against damage from currents flowing from theexternal circuit in the cut-off direction. This occurs in partly shadedmodules of multiple solar cells. Therefore, protective diodes are placedin parallel in relation to the solar cell in the modules.

The layer solar cell array system of the invention permits combining thesolar cell 8 and the protective diode 9 in one component. For thispurpose, an insulation groove 10 perpendicular to the contact electrodes3 a and 3 b through the active solar cell layer 1 down to the insulationlayer 5 is required. The insulation groove 10 can be etched, produced bylaser, sawed or produced in another manner and divides the active solarcell into a zone that acts as a solar cell 8 and a zone that serves asthe protective diode 9.

Otherwise, joint production of the solar cell and the protective diodeoccurs as previously described. However, the emitter layer 1 a of theprotective diode 9 is connected via the corresponding contact channels 6a with the positive-contact electrodes 3 b, the base layer 1 b with thenegative-contact electrodes 3 a. In this manner, the required parallelconnection of the protective diode 9 and the solar cell 8 isautomatically realized with reverse polarity.

For simpler connection in the module or external circuit, the contactelectrodes 3 a and 3 b contacting the emitter respectively the base ofthe solar cell can be connected at the end of the component by atransverse running strip conductor 31 a, 31 b as a so-called bus.Instead of contacting each grid finger of the contact electrodesindividually with the external circuit, it suffices if each respectivecontacts the transverse positive-contact bus 31 b negative-contact bus31 a. For this purpose, a part of the respective bus is bared, i.e. thesolar cell layer and the insulation layer are removed at certainlocations.

Furthermore, based on the thin-layer solar cell array system of theinvention, a module of multiple solar cells 81, 82 and 83 can berealized in a simple manner on a monolithic substrate. Theinterconnection of the solar cells is an intrinsic part of thestructure. The production of the module is analogous to theaforedescribed production of a single solar cell. The active solar celllayer 1 is either deposited only in the separated zones corresponding tothe individual solar cells, or a homogenous layer is subdivided incorresponding zones by separating grooves 10, which reach down to theinsulation layer 5. (See FIGS. 6 and 7.) The subdivision occurs alongthe contact electrodes, i.e. the individual solar cells are separatedperpendicular to the contact electrodes. Two aspects ensure serialconnection of all solar cells 81, 82, and 83. First, the contactelectrodes are not applied on every cell, but rather are applied in sucha manner that successive solar cells always only use one type of the twotypes of contact electrodes jointly (FIG. 6). Secondly, the emitterlayers of successive solar cells are alternately connected with theopposite polarity contact electrode. For example, if the emitter of thecell 81 is connected with the positive-contact electrodes, cell 82 isconnected with the negative-contact electrodes, cell 83 again with thepositive-contact electrodes, etc. Correspondingly, the bases of thesuccessive solar cells are contacted alternately with the minus-contactelectrodes and the plus contact electrodes. This is realized in that theemitter contact holes 6 a of successive solar cells are alternatelyproduced above the negative-contact electrodes and the positive-contactelectrodes. The same applies to the base contact holes 6 b. As all ofthe emitter contact holes 6 a and base contact holes 6 b can be producedsimultaneously for all the solar cells, apart from the separatinggrooves, no additional process step is required to fabricate a wholemodule instead of a single solar cell.

FIG. 7 shows two longitudinal sections of such a module along anegative-contact electrode 3 a and a positive-contact electrode 3 b.Alternately, emitter 1 a and base 1 b of successive solar cells arecontacted along one contact electrode and are connected by the contactelectrodes. In this case only two successive cells are connected by onepolarity of contact electrode. This is a serial connection of all thesolar cells on the monolithic module. Soldering or wiring the individualcells is obviated.

As described in the preceding, the present invention also permitsintegrating a protective diode for each solar cell in such a moduleduring production. In this manner an electrically protected monolithicvoltage source is obtained whose voltage can be adapted to the user'srequirements via the number of solar cells.

List of Reference Numbers

1 active solar cell layer

1 a emitter layer, semiconductor layer zone of a doping type

1 b base layer, semiconductor layer zone of the other doping type

2 carrier substrate

3 a contact electrode, negative contact electrode

3 b contact electrode, positive contact electrode

31 a and 31 b bus contact electrode

4 insulation layer

5 insulation layer

6 a contact channel, emitter contact channel

6 b contact channel, base contact channel

7 conductive material, for example metal

8 solar cell

81, 82 and 83 solar cells connected in parallel

9 protective diode

10 insulation groove

What is claimed is:
 1. A thin-layer solar cell array system including asolar cell layer placed over a planar substrate and provided with atleast one n-type semiconductor zone and at least one p-typesemiconductor zone, first and a second contact electrodes respectivelyof different electrical polarity and respectively connected to then-type semiconductor zone and to the p-type semiconductor zone wherein:an electrical insulation layer is disposed on the planar substrate onwhich the first and second contact electrodes are disposed; the firstcontact electrode faces and is under the solar cell layer; the solarcell layer is separated from the first and second contact electrodes; atleast one first contact channel extends at least through the solar celllayer so that the first contact electrode and the n-type semiconductorzone are electrically connected by an electrically conductive materialinside the at least one first contact channel; the second electricalcontact electrode faces and is under the solar cell layer and is spacedfrom and electrically insulated from the first contact electrode; and atleast one second contact channel extends at least through the solar celllayer so that the second contact electrode and the at least one p-typesemiconductor zone are electrically connected by an electricallyconductive material inside the at least one second contact channel. 2.The thin-layer solar cell array system according to claim 1 comprising:an additional insulation layer disposed on top of the insulation layerwhich separates the first and second contact electrodes from the solarcell layer; and the at least one first and second contact channels alsoextend through the additional insulation layer.
 3. The thin-layer solarcell array system according to claim 1, wherein: the n-type conductingsemiconductor zone and the p-type semiconductor zone are planar layersdisposed on top of each other.
 4. The thin-layer solar cell array systemaccording to claim 2, wherein: the n-type conducting semiconductor zoneand the p-type semiconductor zone are planar layers disposed on top ofeach other.
 5. The thin-layer solar cell array system according to claim1, wherein: the first and second contact electrodes are intermeshed andspaced apart strip conductors, are placed above the carrier substrate.6. The thin-layer solar cell array system according to claim 2, wherein:the first and second contact electrodes are intermeshed and spaced apartstrip conductors, are placed above the carrier substrate and are underthe additional electrical insulating layer and the solar cell layer. 7.The thin-layer solar cell array system according to claim 3, wherein:the first and second contact electrodes are intermeshed and spaced apartstrip conductors, are placed above the carrier substrate.
 8. Thethin-layer solar cell array system according to claim 4, wherein: thefirst and second contact electrodes are intermeshed and spaced apartstrip conductors, are placed above the carrier substrate and are underthe additional electrical insulating layer and the solar cell layer. 9.The thin-layer solar cell array system according to claim 1, wherein:the at least one first and second contact channels are blind holesextending through the solar cell layer and border one of the contactelectrodes.
 10. The thin-layer solar cell array system according toclaim 2, wherein: the at least one first and second contact channels areblind holes extending through the solar cell layer and the additionalinsulation layer and border one of the contact electrodes.
 11. Thethin-layer solar cell array system according to claim 3, wherein: the atleast one first and second contact channels are blind holes extendingthrough the solar cell layer and border one of the contact electrodes.12. The thin-layer solar cell array system according to claim 2,wherein: the at least one first contact channel is lined down to theadditional insulation material with an n-type semiconductor liningmaterial and the electrical conducting material connects the firstcontact electrode electrically with the n-type semiconductor liningmaterial and the at least one second contact channel is lined down tothe additional insulation layer with a p-type semiconductor liningmaterial and the electrically conducting material connects the secondcontact electrode electrically with the p-type semiconductor liningmaterial.
 13. The thin-layer solar cell array system according to claim3, wherein: the at least one first contact channel is lined down to theadditional insulation material with an n-type semiconductor liningmaterial and the electrical conducting material connects the firstcontact electrode electrically with the n-type semiconductor liningmaterial and with a p-type semiconductor lining material and theelectrically conducting material connects the second contact electrodeelectrically with the p-type semiconductor lining material.
 14. Thethin-layer solar cell array system according to claim 4, wherein: the atleast one first contact channel is lined down to the additionalinsulation material with an n-type semiconductor lining material and theelectrical conducting material connects the first contact electrodeelectrically with the n-type semiconductor lining material and the atleast one second contact channel is lined down to the additionalinsulation layer with a p-type semiconductor lining material and theelectrically conducting material connects the second contact electrodeelectrically with the p-type semiconductor lining material.
 15. Thethin-layer solar cell array system according to claim 5, wherein: the atleast one first contact channel is lined down to the additionalinsulation material with an n-type semiconductor lining material and theelectrical conducting material connects the first contact electrodeelectrically with the n-type semiconductor lining material with a p-typesemiconductor lining material and the electrically conducting materialconnects the second contact electrode electrically with the p-typesemiconductor lining material.
 16. The thin-layer solar cell arraysystem according to claim 6, wherein: the at least one first contactchannel is lined down to the additional insulation material with ann-type semiconductor lining material and the electrical conductingmaterial connects the first contact electrode electrically with then-type semiconductor lining material and the at least one second contactchannel is lined down to the additional insulation layer with a p-typesemiconductor lining material and the electrically conducting materialconnects the second contact electrode electrically with the p-typesemiconductor lining material.
 17. The thin-layer solar cell arraysystem according to claim 7, wherein: the at least one first contactchannel is lined down to the additional insulation material with ann-type semiconductor lining material and the electrical conductingmaterial connects the first contact electrode electrically with then-type semiconductor lining material and with a p-type semiconductorlining material and the electrically conducting material connects thesecond contact electrode electrically with the p-type semiconductorlining material.
 18. The thin-layer solar cell array system according toclaim 9, wherein: the at least one first and second contact channels areprovided with an interior contour shaped as one of a straight cylinderor a truncated cone.
 19. The thin-layer solar cell array systemaccording to claim 10, wherein: the at least one first and secondcontact channels are provided with an interior contour shaped as one ofa straight cylinder or a truncated cone.
 20. The thin-layer solar cellarray system according to claim 11, wherein: the at least one first andsecond contact channels are provided with an interior contour shaped asone of a straight cylinder or a truncated cone.
 21. The thin-layer solarcell array system according to claim 1, comprising: a protective diodeis provided which is one of laterally separated or electricallyinsulated from the solar cell layer on the carrier substrate, theprotective diode structure including the n-type and p-type semiconductorzones electrically contacting the first and second contact electrodes sothat contacting the semiconductor zones occurs with a reverse polarityin comparison to an adjacent solar cell layer.
 22. The thin-layer solarcell array system according to claim 21, wherein: the n-typesemiconductor zone is connected with the contact electrode of positivepolarity and the p-type semiconductor zone is connected with the contactelectrode of negative polarity.